发明授权
- 专利标题: Memory system
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申请号: US16887520申请日: 2020-05-29
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公开(公告)号: US11126379B2公开(公告)日: 2021-09-21
- 发明人: Do Hun Kim
- 申请人: SK hynix Inc.
- 申请人地址: KR Gyeonggi-do
- 专利权人: SK hynix Inc.
- 当前专利权人: SK hynix Inc.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: IP & T Group LLP
- 优先权: KR10-2019-0152195 20191125
- 主分类号: G06F3/06
- IPC分类号: G06F3/06
摘要:
A memory system includes a memory device including a plurality of segments; a processor configured to generate a Read-Modify-Write (RMW) command on a target segment address corresponding to a target segment among the plurality of segments; a scheduler configured to receive the RMW command from the processor and schedule the RMW command; and a RMW unit configured to execute the RMW command on the memory device according to control of the scheduler, wherein the scheduler compares, when a plurality of RMW commands received from the processor are pending, target segment addresses of the plurality of RMW commands to re-order the plurality of RMW commands.
公开/授权文献
- US20210157527A1 MEMORY SYSTEM 公开/授权日:2021-05-27
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