Invention Grant
- Patent Title: Method for addressing a non-volatile memory on I2C bus and corresponding memory device
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Application No.: US15842586Application Date: 2017-12-14
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Publication No.: US11127468B2Publication Date: 2021-09-21
- Inventor: François Tailliet , Marc Battista
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: Slater Matsil, LLP
- Priority: FR1753214 20170412
- Main IPC: G06F12/02
- IPC: G06F12/02 ; G11C16/20 ; G11C16/10 ; G11C11/56 ; G11C16/12 ; G06F13/42 ; G06F9/30

Abstract:
Some embodiments include a method for addressing an integrated circuit for a non-volatile memory of the EEPROM type on a bus of the I2C type. The memory includes J hardware-identification pins, with J being an integer lying between 1 and 3, which are assigned respective potentials defining an assignment code on J bits. The method includes a first mode of addressing used selectively when the assignment code is equal to a fixed reference code on J bits, and a second mode of addressing used selectively when the assignment code is different from the reference code. In the first mode, the memory plane of the non-volatile memory is addressed by a memory address contained in the last low-order bits of the slave address and in the first N bytes received. In the second mode, the memory plane is addressed by a memory address contained in the first N+1 bytes received.
Public/Granted literature
- US20180301196A1 Method for Addressing a Non-Volatile Memory on I2C Bus and Corresponding Memory Device Public/Granted day:2018-10-18
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