Invention Grant
- Patent Title: Method of treating semiconductor substrate
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Application No.: US16542036Application Date: 2019-08-15
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Publication No.: US11127583B2Publication Date: 2021-09-21
- Inventor: Chung-Hao Chang , Chitong Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/027 ; C23C16/455 ; B05D1/00

Abstract:
A method of treating a semiconductor substrate includes converting a first main side of the semiconductor substrate having a first coefficient of static friction relative to a surface of a wafer table to a second coefficient of static friction relative to the surface of the wafer table, wherein the second coefficient of static friction is less than the first coefficient of static friction. A photoresist layer is applied over a second main side of the semiconductor substrate having the first coefficient of static friction. The second main side opposes the first main side. The semiconductor substrate is placed on the wafer table so that the first main side of the semiconductor substrate faces the wafer table.
Public/Granted literature
- US20200058487A1 METHOD AND APPARATUS TO TREAT SEMICONDUCTOR SUBSTRATE Public/Granted day:2020-02-20
Information query
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