- 专利标题： Semiconductor module and power conversion device
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申请号： US16605890申请日： 2017-09-04
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公开(公告)号： US11127603B2公开(公告)日： 2021-09-21
- 发明人: Osamu Usui
- 申请人： Mitsubishi Electric Corporation
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Studebaker & Brackett PC
- 国际申请： PCT/JP2017/031807 WO 20170904
- 国际公布： WO2019/043950 WO 20190307
- 主分类号： H01L21/52
- IPC分类号： H01L21/52 ; H01L23/48 ; H01L21/18 ; H01L23/02 ; H01L23/00
摘要：
A semiconductor chip (2) includes a surface electrode (3). A conductive bonding member (8) includes first and second bonding members (8a,8b) provided on the surface electrode (3). A lead electrode (9) is bonded to a part of the surface electrode (3) via the first bonding member (8a) and has no contact with the second bonding member (8b). A signal wire (11) is bonded to the surface electrode (3). The second bonding member (8b) is arranged between the first bonding member (8a) and the signal wire (11). A thickness of the first bonding member (8a) is larger than a thickness of the second bonding member (8b).
公开/授权文献
- US20200343106A1 SEMICONDUCTOR MODULE AND POWER CONVERSION DEVICE 公开/授权日：2020-10-29
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