Invention Grant
- Patent Title: Testing semiconductor devices based on warpage and associated methods
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Application No.: US15962648Application Date: 2018-04-25
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Publication No.: US11127612B2Publication Date: 2021-09-21
- Inventor: James D. Huffaker , Kim M. Hartnett , Ajay Raghunathan , Libo Wang , Linmiao Zhang , Di Wu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: G06F17/18
- IPC: G06F17/18 ; G01N25/72 ; H01L21/67 ; H01L21/66

Abstract:
Several embodiments of the present technology are directed to semiconductor devices, and systems and associated methods for treating semiconductor devices based on warpage data. In some embodiments, a method can include heating a plurality of semiconductor devices from a first temperature to a second temperature, and determining warpage data at a plurality of points on the surfaces of the semiconductor devices as they are being heated. The method can further comprise applying a multivariate analysis to the surface warpage data to generate a multivariate statistic for each of the semiconductor devices at various sample temperatures. The multivariate statistics can be used to determine whether the semiconductor devices exceed or fall below a threshold limit.
Public/Granted literature
- US20190333796A1 TESTING SEMICONDUCTOR DEVICES BASED ON WARPAGE AND ASSOCIATED METHODS Public/Granted day:2019-10-31
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