发明授权
- 专利标题： Semiconductor device with conductive protrusions and method for fabricating the same
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申请号： US16823759申请日： 2020-03-19
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公开(公告)号： US11127632B1公开(公告)日： 2021-09-21
- 发明人: Shing-Yih Shih
- 申请人： NANYA TECHNOLOGY CORPORATION
- 申请人地址： TW New Taipei
- 专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址： TW New Taipei
- 代理机构： Muncy, Geissler, Olds & Lowe, P.C.
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/58 ; H01L23/532 ; H01L23/522 ; H01L21/02 ; H01L21/311 ; H01L23/00
摘要：
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor structure, a first connecting structure positioned on the first semiconductor structure, and a second semiconductor structure positioned on the first connecting structure. The first connecting structure includes a first connecting insulating layer positioned on the first semiconductor structure, a plurality of first connecting contacts positioned in the first connecting insulating layer, and a plurality of first supporting contacts positioned in the first connecting insulating layer. The top surfaces of the plurality of first connecting contacts contact a bottom surface of the second semiconductor structure. A top surface of the plurality of first connecting contact and a top surface of the plurality of first supporting contact protrude from a top surface of the first connecting insulating layer.
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