Invention Grant
- Patent Title: High voltage transistor with fin source/drain regions and trench gate structure
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Application No.: US16526529Application Date: 2019-07-30
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Publication No.: US11127818B2Publication Date: 2021-09-21
- Inventor: Jagar Singh , Srikanth Balaji Samavedam
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Hoffman Warnick LLC
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L21/8234 ; H01L29/423 ; H01L27/088
Abstract:
An illustrative device includes a transistor including a first set of fins defined above a substrate, a second set of fins defined above the substrate, and a gate structure embedded in the substrate between the first set of fins and the second set of fins, wherein the first set of fins and the second set of fins are doped with a first dopant type and the substrate is doped with a second dopant type different than the first dopant type.
Public/Granted literature
- US20210036108A1 HIGH VOLTAGE TRANSISTOR WITH FIN SOURCE/DRAIN REGIONS AND TRENCH GATE STRUCTURE Public/Granted day:2021-02-04
Information query
IPC分类:
