Invention Grant
- Patent Title: Photoelectric conversion element, optical sensor, imaging element, and compound
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Application No.: US16726258Application Date: 2019-12-24
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Publication No.: US11127869B2Publication Date: 2021-09-21
- Inventor: Tomoaki Yoshioka , Eiji Fukuzaki , Kimiatsu Nomura
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: JCIPRNET
- Priority: JPJP2017-133896 20170707
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L31/0445 ; H01L27/146 ; H01L27/30 ; H01L51/00 ; H01L51/42 ; H01L51/44

Abstract:
The invention provides a photoelectric conversion element including a photoelectric conversion film excellent in vapor deposition suitability and exhibiting excellent photoelectric conversion efficiency in a case where the photoelectric conversion film is a thin film, an optical sensor, an imaging element, and a compound. The photoelectric conversion element of the embodiment of the invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1).
Information query
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