Invention Grant
- Patent Title: Quantum-dot light emitting diode and quantum-dot light emitting display device
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Application No.: US16691224Application Date: 2019-11-21
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Publication No.: US11127913B2Publication Date: 2021-09-21
- Inventor: Sung-Il Woo , Byung-Geol Kim
- Applicant: LG Display Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Polsinelli PC
- Priority: KR10-2018-0146371 20181123
- Main IPC: H01L51/50
- IPC: H01L51/50 ; H01L27/32 ; H01L51/00

Abstract:
A quantum-dot light emitting diode includes a first electrode; a second electrode facing the first electrode; a QD emitting material layer between the first and second electrodes and including a QD; a hole transporting layer between the first electrode and the QD emitting material layer and including a first hole transporting material; a first electron transporting layer between the QD emitting material layer and the second electrode; and a first electron control layer between the QD emitting material layer and the first electron transporting layer and including a second hole transporting material.
Public/Granted literature
- US20200168827A1 QUANTUM-DOT LIGHT EMITTING DIODE AND QUANTUM-DOT LIGHT EMITTING DISPLAY DEVICE Public/Granted day:2020-05-28
Information query
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