Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US16780027Application Date: 2020-02-03
-
Publication No.: US11133078B2Publication Date: 2021-09-28
- Inventor: Masayuki Sakakura , Yuugo Goto , Hiroyuki Miyake , Daisuke Kurosaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2011-222990 20111007
- Main IPC: G11C19/28
- IPC: G11C19/28 ; G11C19/18 ; H01L27/12 ; H01L27/02

Abstract:
A semiconductor device in which a decrease in the yield by electrostatic destruction can be prevented is provided. A scan line driver circuit for supplying a signal for selecting a plurality of pixels to a scan line includes a shift register for generating the signal. One conductive film functioning as respective gate electrodes of a plurality of transistors in the shift register is divided into a plurality of conductive films. The divided conductive films are electrically connected to each other by a conductive film which is formed in a layer different from the divided conductive films are formed. The plurality of transistors includes a transistor on an output side of the shift register.
Public/Granted literature
- US20200176068A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-06-04
Information query