- 专利标题: Semiconductor device
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申请号: US16358989申请日: 2019-03-20
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公开(公告)号: US11133311B2公开(公告)日: 2021-09-28
- 发明人: Krishna Kumar Bhuwalka , Kyoung Min Choi , Takeshi Okagaki , Dong Won Kim , Jong Chol Kim
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Lee IP Law, P.C.
- 优先权: KR10-2018-0100509 20180827
- 主分类号: H01L27/092
- IPC分类号: H01L27/092 ; H01L29/78 ; H01L29/423 ; H01L29/10 ; H01L29/06
摘要:
A semiconductor device includes channel layers on a substrate, the channel layers being spaced apart from each other, and having first side surfaces and second side surfaces opposing each other in a first direction, a gate electrode surrounding the channel layers and having a first end portion and a second end portion, opposing each other in the first direction, and a source/drain layer on a first side of the gate electrode and in contact with the channel layers, a portion of the source/drain layer protruding further than the first end portion of the gate electrode in the first direction, wherein a first distance from the first end portion of the gate electrode to the first side surfaces of the channel layers is shorter than a second distance from the second end portion of the gate electrode to the second side surfaces of the channel layers.
公开/授权文献
- US20200066725A1 SEMICONDUCTOR DEVICE 公开/授权日:2020-02-27