Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US16358989Application Date: 2019-03-20
-
Publication No.: US11133311B2Publication Date: 2021-09-28
- Inventor: Krishna Kumar Bhuwalka , Kyoung Min Choi , Takeshi Okagaki , Dong Won Kim , Jong Chol Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR10-2018-0100509 20180827
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/78 ; H01L29/423 ; H01L29/10 ; H01L29/06

Abstract:
A semiconductor device includes channel layers on a substrate, the channel layers being spaced apart from each other, and having first side surfaces and second side surfaces opposing each other in a first direction, a gate electrode surrounding the channel layers and having a first end portion and a second end portion, opposing each other in the first direction, and a source/drain layer on a first side of the gate electrode and in contact with the channel layers, a portion of the source/drain layer protruding further than the first end portion of the gate electrode in the first direction, wherein a first distance from the first end portion of the gate electrode to the first side surfaces of the channel layers is shorter than a second distance from the second end portion of the gate electrode to the second side surfaces of the channel layers.
Public/Granted literature
- US20200066725A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-02-27
Information query
IPC分类: