Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16243564Application Date: 2019-01-09
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Publication No.: US11133392B2Publication Date: 2021-09-28
- Inventor: Hyoseok Choi , Hwichan Jun , Yoonhae Kim , Chulsung Kim , Heungsik Park , Doo-Young Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR10-2015-0053887 20150416
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/78 ; H01L29/66

Abstract:
Provided is a semiconductor device including a substrate with an active pattern, a gate electrode crossing the active pattern, a source/drain region in an upper portion of the active pattern at a side of the gate electrode, the source/drain region including a recess region at an upper region thereof, a contact electrically connected to the source/drain region, the contact including a lower portion provided in the recess region, and a metal silicide layer provided at a lower region of the recess region and between the source/drain region and the contact.
Public/Granted literature
- US20190148503A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-05-16
Information query
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