Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
-
Application No.: US16413425Application Date: 2019-05-15
-
Publication No.: US11133418B2Publication Date: 2021-09-28
- Inventor: Yen-Chen Chen , Xiao Wu , Hai Tao Liu , Ming Hua Du , Shouguo Zhang , Yao-Hung Liu , Chin-Fu Lin , Chun-Yuan Wu
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/24 ; H01L29/66 ; H01L29/45 ; H01L29/417
Abstract:
A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.
Public/Granted literature
- US20190267492A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2019-08-29
Information query
IPC分类:
