Invention Grant
- Patent Title: Memory device with a memory repair mechanism and methods for operating the same
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Application No.: US16693126Application Date: 2019-11-22
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Publication No.: US11139045B2Publication Date: 2021-10-05
- Inventor: Christopher G. Wieduwilt , James S. Rehmeyer , Seth A. Eichmeyer
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C29/44 ; G11C29/02 ; G11C29/00 ; H03M13/11 ; G11C11/409 ; H03M13/13 ; G11C29/18

Abstract:
Methods, apparatuses and systems related to managing access to a memory device are described. A memory device includes fuses and latches for storing a repair segment locator and a repair address for each repair of one or more defective memory cells. A segment-address determination circuit generate an active segment address based on the repair address according to the repair segment locator and an address for a read or a write operation. A comparator circuitry is configured to determine whether the active segment address matches the address for the read or the write operation for replacing the one or more defective memory cells with the plurality of redundant cells when the address for the read/write operation corresponds to the one or more defective memory cells.
Public/Granted literature
- US20210158888A1 MEMORY DEVICE WITH A MEMORY REPAIR MECHANISM AND METHODS FOR OPERATING THE SAME Public/Granted day:2021-05-27
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