- 专利标题： Semiconductor devices having cutouts in an encapsulation material and associated production methods
-
申请号： US16447610申请日： 2019-06-20
-
公开(公告)号： US11145563B2公开(公告)日： 2021-10-12
- 发明人: Christian Geissler , Walter Hartner , Claus Waechter , Maciej Wojnowski
- 申请人： Infineon Technologies AG
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Harrity & Harrity LLP
- 优先权： DE102018210755.6 20180629,DE102019112940.0 20190516
- 主分类号： H01L23/31
- IPC分类号： H01L23/31 ; H01L21/56 ; H01L21/683 ; H01L23/00
摘要：
A method comprises providing a least one semiconductor component, wherein each of the at least one semiconductor component comprises: a semiconductor chip, wherein the semiconductor chip comprises a first main surface and a second main surface opposite the first main surface, and a sacrificial layer arranged above the opposite second main surface of the semiconductor chip. The method further comprises encapsulating the at least one semiconductor component with an encapsulation material. The method further comprises removing the sacrificial material, wherein above each of the at least one semiconductor chip a cutout is formed in the encapsulation material. The method further comprises arranging at least one lid above the at least one cutout, wherein a closed cavity is formed by the at least one cutout and the at least one lid above each of the at least one semiconductor chip.
公开/授权文献
信息查询
IPC分类:
