Invention Grant
- Patent Title: Structure having improved fin critical dimension control
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Application No.: US16582572Application Date: 2019-09-25
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Publication No.: US11145760B2Publication Date: 2021-10-12
- Inventor: Kuan Jung Chen , I-Chih Chen , Chih-Mu Huang , Ching-Pin Lin , Sheng-Lin Hsieh
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. , TSMC NANJING COMPANY, LIMITED
- Applicant Address: TW Hsinchu; CN Nanjing
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,TSMC NANJING COMPANY, LIMITED
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,TSMC NANJING COMPANY, LIMITED
- Current Assignee Address: TW Hsinchu; CN Nanjing
- Agency: Hauptman Ham, LLP
- Priority: CN201910813994.1 20190830
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/768 ; H01L21/762 ; H01L29/66
Abstract:
A semiconductor structure includes an active semiconductor fin having a first height, a dummy semiconductor fin adjacent to the active semiconductor fin and having a second height less than the first height, an isolation structure between the active semiconductor fin and the dummy semiconductor fin, and a dielectric cap over the dummy semiconductor fin. The dielectric cap is separated from the active semiconductor fin.
Public/Granted literature
- US20210066491A1 STRUCTURE AND METHOD FOR IMPROVED FIN CRITICAL DIMENSION CONTROL Public/Granted day:2021-03-04
Information query
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