Invention Grant
- Patent Title: Wide bandgap group IV subfin to reduce leakage
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Application No.: US16094817Application Date: 2016-06-29
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Publication No.: US11152290B2Publication Date: 2021-10-19
- Inventor: Benjamin Chu-Kung , Van H. Le , Willy Rachmady , Matthew V. Metz , Jack T. Kavalieros , Ashish Agrawal , Seung Hoon Sung
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- International Application: PCT/US2016/040129 WO 20160629
- International Announcement: WO2018/004571 WO 20180104
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L29/10 ; H01L29/78 ; H01L29/66
Abstract:
A subfin layer is deposited on a substrate. A fin layer is deposited on the subfin layer. The subfin layer has a conduction band energy offset relative to the fin layer to prevent a leakage in the subfin layer. In one embodiment, the subfin layer comprises a group IV semiconductor material layer that has a bandgap greater than a bandgap of the fin layer.
Public/Granted literature
- US20190122972A1 WIDE BANDGAP GROUP IV SUBFIN TO REDUCE LEAKAGE Public/Granted day:2019-04-25
Information query
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