Invention Grant
- Patent Title: Thin-film transistor and display panel
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Application No.: US16706640Application Date: 2019-12-06
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Publication No.: US11152511B2Publication Date: 2021-10-19
- Inventor: SunWook Ko , KumMi Oh
- Applicant: LG Display Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Fenwick & West LLP
- Priority: KR10-2018-0163871 20181218
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L29/10 ; H01L29/423 ; H01L29/78

Abstract:
A thin-film transistor and a display panel are provided in which current characteristics of the thin-film transistor are improved by a dual gate electrode structure, and the output characteristics of the thin-film transistor are improved by dividing the top gate electrode (or bottom gate electrode) of the dual gate electrode into two electrodes and applying a back bias voltage to the top gate electrode adjacent to a source region. A high-resolution display panel or a transparent display panel is realized by increasing the aperture ratio (or transmittance) of the display panel using the highly integrated high-current device.
Information query
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