- Patent Title: Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containing gas at a supersaturation ratio of greater than 1 and equal to or less than 5
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Application No.: US16776647Application Date: 2020-01-30
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Publication No.: US11155931B2Publication Date: 2021-10-26
- Inventor: Yusuke Mori , Masashi Yoshimura , Masayuki Imanishi , Akira Kitamoto , Junichi Takino , Tomoaki Sumi
- Applicant: OSAKA UNIVERSITY , Panasonic Corporation
- Applicant Address: JP Osaka; JP Osaka
- Assignee: OSAKA UNIVERSITY,Panasonic Corporation
- Current Assignee: OSAKA UNIVERSITY,Panasonic Corporation
- Current Assignee Address: JP Osaka; JP Osaka
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JPJP2019-018035 20190204
- Main IPC: C30B25/16
- IPC: C30B25/16 ; C30B29/40
Abstract:
A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.
Public/Granted literature
- US20200255975A1 METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL Public/Granted day:2020-08-13
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