- 专利标题： FinFET radiation dosimeter
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申请号： US16572102申请日： 2019-09-16
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公开(公告)号： US11158756B2公开(公告)日： 2021-10-26
- 发明人: Alexander Reznicek , Bahman Hekmatshoartabari , Jeng-Bang Yau , Karthik Balakrishnan
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 L. Jeffrey Kelly, Esq.
- 主分类号： H01L31/119
- IPC分类号： H01L31/119 ; H05G1/28 ; G01T1/02 ; H01L29/78 ; H01L21/02 ; H01L21/8234 ; H01L27/088 ; H01L29/06 ; G01T7/00
摘要：
A semiconductor radiation monitor (i.e., dosimeter) is provided that has an oxide charge storage region located on a first side of a semiconductor fin and a functional gate structure located on a second side of the semiconductor fin that is opposite the first side. Charges are created in the oxide charge storage region that is located on the first side of the semiconductor fin and detected on the second side of the semiconductor fin by the functional gate structure. Multiple semiconductor fins in parallel can form a dense and very sensitive semiconductor radiation monitor.
公开/授权文献
- US20210083139A1 FINFET RADIATION DOSIMETER 公开/授权日：2021-03-18