- 专利标题: Method for detecting memory leak and electronic device thereof
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申请号: US16526229申请日: 2019-07-30
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公开(公告)号: US11169866B2公开(公告)日: 2021-11-09
- 发明人: Sangjun Park , Sungdo Moon , Mooyoung Kim
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Nixon & Vanderhye P.C.
- 优先权: KR10-2018-0090208 20180802
- 主分类号: G06F11/00
- IPC分类号: G06F11/00 ; G06F11/07 ; G06F11/30 ; G06F11/36
摘要:
Various embodiments relate to a method for detecting a memory leak and an electronic device thereof, the electronic device including a processor, and a memory operatively connected to the processor, wherein the memory stores instructions which, when executed by the processor, control the electronic device to: acquire usage information for the memory of a process executed by the processor based on a collection period determined based at least partially on a characteristic of the process; identify a change pattern of a usage amount for the memory of the process based on the usage information; and determine whether a memory leak occurs based on the change pattern of the usage amount.
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