Invention Grant
- Patent Title: Magnetic memory devices
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Application No.: US16552110Application Date: 2019-08-27
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Publication No.: US11170832B2Publication Date: 2021-11-09
- Inventor: Ki Woong Kim , Juhyun Kim , Se Chung Oh , Ung Hwan Pi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR10-2018-0139731 20181114
- Main IPC: H01L27/22
- IPC: H01L27/22 ; G11C11/16 ; H01L43/12 ; H01L43/10 ; H01L43/02
Abstract:
A magnetic memory device includes a first conductive line extending in a first direction on a substrate, a first magnetic pattern on the first conductive line, the first magnetic pattern including a first portion and a second portion that have different thicknesses, and a second conductive line on the first magnetic pattern and extending in a second direction intersecting the first direction.
Public/Granted literature
- US20200152251A1 MAGNETIC MEMORY DEVICES Public/Granted day:2020-05-14
Information query
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