- 专利标题： Magnetic memory devices
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申请号： US16552110申请日： 2019-08-27
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公开(公告)号： US11170832B2公开(公告)日： 2021-11-09
- 发明人: Ki Woong Kim , Juhyun Kim , Se Chung Oh , Ung Hwan Pi
- 申请人： SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 代理机构： Lee IP Law, P.C.
- 优先权： KR10-2018-0139731 20181114
- 主分类号： H01L27/22
- IPC分类号： H01L27/22 ; G11C11/16 ; H01L43/12 ; H01L43/10 ; H01L43/02
摘要：
A magnetic memory device includes a first conductive line extending in a first direction on a substrate, a first magnetic pattern on the first conductive line, the first magnetic pattern including a first portion and a second portion that have different thicknesses, and a second conductive line on the first magnetic pattern and extending in a second direction intersecting the first direction.
公开/授权文献
- US20200152251A1 MAGNETIC MEMORY DEVICES 公开/授权日：2020-05-14
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