- 专利标题： Memory device and manufacturing method thereof
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申请号： US16443772申请日： 2019-06-17
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公开(公告)号： US11177430B2公开(公告)日： 2021-11-16
- 发明人: Ya-Jui Tsou , Zong-You Luo , Chee-Wee Liu , Shao-Yu Lin , Liang-Chor Chung , Chih-Lin Wang
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. , NATIONAL TAIWAN UNIVERSITY
- 申请人地址： TW Hsinchu; TW Taipei
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- 当前专利权人地址： TW Hsinchu; TW Taipei
- 代理机构： Maschoff Brennan
- 主分类号： H01L43/02
- IPC分类号： H01L43/02 ; H01L27/22 ; H01L43/12 ; G11C11/16
摘要：
A magnetoresistive memory device includes a memory stack, a spin-orbit-torque (SOT) layer, and a free layer. The memory stack includes a pinned layer and a reference layer over the pinned layer. The SOT layer is spaced apart from the memory stack. The free layer is over the memory stack and the SOT layer.
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