Invention Grant
- Patent Title: Hole formation method and measurement device
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Application No.: US15129854Application Date: 2015-03-26
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Publication No.: US11181502B2Publication Date: 2021-11-23
- Inventor: Naoshi Itabashi , Sonoko Migitaka , Itaru Yanagi , Rena Akahori , Kenichi Takeda
- Applicant: Hitachi High-Technologies Corporation
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Crowell & Moring LLP
- Priority: JPJP2014-075880 20140402
- International Application: PCT/JP2015/059424 WO 20150326
- International Announcement: WO2015/152003 WO 20151008
- Main IPC: G01N21/63
- IPC: G01N21/63 ; G01N27/00 ; G01N27/92 ; G01N27/447 ; G01N21/64 ; G01N21/65 ; G01N33/487 ; B82Y40/00

Abstract:
While an insulating film having a near-field light generating element placed thereon is being irradiated with light in an electrolytic solution, or after the film that has been irradiated with light is disposed in the electrolytic solution, a first voltage is applied between the two electrodes installed in the electrolytic solution across the film, a second voltage is then applied between the two electrodes, and a value of a current that flows between the two electrodes due to the application of the second voltage is detected. This procedure is stopped when the current value reaches or exceeds a pre-set threshold value, whereby a hole is formed at a desired location in the thin-film.
Public/Granted literature
- US20170138899A1 Hole Formation Method and Measurement Device Public/Granted day:2017-05-18
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