The present disclosure relates to a thin film transistor. The thin film transistor may include a substrate, a source electrode on the substrate, a drain electrode on the substrate, a gate on the substrate, and an active layer on the substrate. The source electrode may include a first teeth portion. The drain electrode may include a second teeth portion. The gate may include a third teeth portion. The active layer may include a plurality of channel regions. The first teeth portion, the second teeth portion, the third teeth portion, and the active layer form a plurality of sub-thin film transistors connected in parallel. The center sub-thin film transistor has a channel region having a smallest width-to-length ratio among the plurality of sub-thin film transistors.