Invention Grant
- Patent Title: Sense amplifier circuit and semiconductor memory device
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Application No.: US16799196Application Date: 2020-02-24
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Publication No.: US11183230B2Publication Date: 2021-11-23
- Inventor: Rui Ito , Takeshi Hioka , Takuyo Kodama
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JPJP2019-148665 20190813
- Main IPC: G11C16/24
- IPC: G11C16/24 ; G11C11/4091 ; G11C11/4074 ; G11C11/56 ; G11C11/4094

Abstract:
According to one embodiment, a sense amplifier circuit includes an amplifier having an input terminal connected to a sense node, and a first capacitor configured to be connected in a feedback path of the amplification transistor and to a bit line of a memory cell via the sense node, the first capacitor configured to supply a current to the memory cell and integrate the current when the memory cell is read.
Public/Granted literature
- US20210050048A1 SENSE AMPLIFIER CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2021-02-18
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