- 专利标题： Substrate processing method and substrate processing apparatus
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申请号： US16841716申请日： 2020-04-07
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公开(公告)号： US11183396B2公开(公告)日： 2021-11-23
- 发明人: Shinichiro Shimomura
- 申请人： TOKYO ELECTRON LIMITED
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 代理机构： Amin, Turocy & Watson, LLP
- 优先权： JPJP2019-080689 20190422
- 主分类号： H01L21/321
- IPC分类号： H01L21/321 ; H01L21/3213 ; H01L21/67 ; H01L21/683
摘要：
A substrate processing method according to the present disclosure includes heating and removing. The heating includes heating a substrate with a copper film that is formed thereon. The removing includes removing a copper film that is formed on a peripheral part of the substrate after the heating by supplying a processing liquid that contains an acidic chemical liquid to the peripheral part.
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