- 专利标题： 1S-1C DRAM with a non-volatile CBRAM element
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申请号： US16636904申请日： 2017-09-29
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公开(公告)号： US11195578B2公开(公告)日： 2021-12-07
- 发明人: Ravi Pillarisetty , Abhishek A. Sharma , Brian S. Doyle , Elijah V. Karpov , Prashant Majhi
- 申请人： Intel Corporation
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Schwabe, Williamson & Wyatt, P.C.
- 国际申请： PCT/US2017/054597 WO 20170929
- 国际公布： WO2019/066964 WO 20190404
- 主分类号： G11C13/00
- IPC分类号： G11C13/00 ; H01L27/24
摘要：
One embodiment of a memory device comprises a selector and a storage capacitor in series with the selector. A further embodiment comprises a conductive bridging RAM (CBRAM) in parallel with a storage capacitor coupled between the selector and zero volts. A plurality of memory devices form a 1S-1C or a 1S-1C-CBRAM cross-point DRAM array with 4F2 or less density.
公开/授权文献
- US20200168274A1 1S-1C DRAM WITH A NON-VOLATILE CBRAM ELEMENT 公开/授权日：2020-05-28
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