Invention Grant
- Patent Title: Method for forming semiconductor contact structure
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Application No.: US16707301Application Date: 2019-12-09
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Publication No.: US11195791B2Publication Date: 2021-12-07
- Inventor: Yu-Wen Cheng , Wei-Yip Loh , Yu-Hsiang Liao , Sheng-Hsuan Lin , Hong-Mao Lee , Chun-I Tsai , Ken-Yu Chang , Wei-Jung Lin , Chih-Wei Chang , Ming-Hsing Tsai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522 ; H01L29/66 ; H01L21/285 ; H01L21/8238 ; H01L23/498 ; H01L23/00 ; H01L21/48
Abstract:
A method for forming a semiconductor contact structure is provided. The method includes depositing a dielectric layer over a substrate. The method also includes etching the dielectric layer to expose a sidewall of the dielectric layer and a top surface of the substrate. In addition, the method includes forming a silicide region in the substrate. The method also includes applying a plasma treatment to the sidewall of the dielectric layer and the top surface of the substrate to form a nitridation region adjacent to a periphery of the silicide region. The method further includes depositing an adhesion layer on the dielectric layer and the silicide region.
Information query
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