Invention Grant
- Patent Title: Bandgap reference voltage generating circuit
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Application No.: US16887002Application Date: 2020-05-29
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Publication No.: US11199865B2Publication Date: 2021-12-14
- Inventor: Hyunwook Kang , Cheheung Kim , Hyeokki Hong , Sungchan Kang , Yongseop Yoon , Choongho Rhee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2019-0152595 20191125
- Main IPC: G05F3/30
- IPC: G05F3/30 ; G05F3/22

Abstract:
A bandgap reference voltage generating circuit includes a first current generator generating a first complementary-to-absolute temperature (CTAT) current and a first proportional-to-absolute temperature (PTAT) current, a second current generator generating a second CTAT current and a second PTAT current, and an output circuit outputting a reference voltage based on a difference between a first voltage based on the first CTAT current and the first PTAT current and a second voltage based on the second CTAT current and the second PTAT current, wherein the first CTAT current is cancelled by the second CTAT current.
Public/Granted literature
- US20210157351A1 BANDGAP REFERENCE VOLTAGE GENERATING CIRCUIT Public/Granted day:2021-05-27
Information query
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