A processing device, operatively coupled with a memory device, is configured to receive a write request identifying data to be stored in a segment of the memory device. The processing device determines a write-to-write (W2W) time interval for the segment and determines whether the W2W time interval falls within a first W2W time interval range, the first W2W time interval range corresponds to a first pre-read voltage level. Responsive to the W2W time interval for the segment falling within the first W2W interval range, the processing device performs a pre-read operation on the segment using the first pre-read voltage level. The processing device identifies a subset of the data to be stored in the segment comprising bits of data that are different than corresponding bits of the data stored in the segment. The processing device further performs a write operation to store the subset of the data in the segment.