Invention Grant
- Patent Title: Non-volatile memory device, controller and memory system
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Application No.: US16916345Application Date: 2020-06-30
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Publication No.: US11200932B2Publication Date: 2021-12-14
- Inventor: Kuiyon Mun , Beomkyu Shin , Jaeyong Jeong
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2019-0096325 20190807
- Main IPC: G11C8/18
- IPC: G11C8/18 ; G11C8/06 ; G11C7/22 ; G11C7/10

Abstract:
A non-volatile memory device is provided. The non-volatile memory device includes a clock pin, a clock signal being received from a controller through the clock pin; a first input/output pin; a second input/output pin, data being received from the controller in synchronization with the clock signal through the second input/output pin; a command/address buffer configured to operate at a first operating speed and buffer a command and an address received through the first input/output pin in synchronization with the clock signal; a memory cell array including a plurality of memory cells; and a control logic configured to control operations with respect to the plurality of memory cells, based on the command and the address buffered in the command/address buffer.
Public/Granted literature
- US20210043240A1 NON-VOLATILE MEMORY DEVICE, CONTROLLER AND MEMORY SYSTEM Public/Granted day:2021-02-11
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