- 专利标题： Monolayer film mediated precision material etch
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申请号： US15658149申请日： 2017-07-24
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公开(公告)号： US11205576B2公开(公告)日： 2021-12-21
- 发明人: Alok Ranjan , Peter Ventzek
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Rothwell, Figg, Ernst & Manbeck, P.C.
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L27/06
摘要：
A method of etching is described. The method includes treating at least a portion of a surface exposed on a substrate with an adsorption-promoting agent to alter a functionality of the exposed surface and cause subsequent adsorption of a carbon-containing precursor, and thereafter, adsorbing the organic precursor to the functionalized surface to form a carbon-containing film. Then, at least a portion of the surface of the carbon-containing film is exposed to an ion flux to remove the adsorbed carbon-containing film and at least a portion of the material of the underlying substrate.
公开/授权文献
- US20180025916A1 MONOLAYER FILM MEDIATED PRECISION MATERIAL ETCH 公开/授权日：2018-01-25
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