An electronic device has a DC/DC boost converter that includes a power NFET. The power NFET is coupled between a first pin, which can be coupled to a battery through an inductor, and a second pin that can be coupled to a ground plane. A switch-node is coupled to a third pin, which can be coupled to a diode to provide a boosted output voltage. A gate driver can receive a FET-on signal and drive a gate of the power NFET. A digital logic circuit provides the FET-on signal and includes an Ipeak gear-shifting circuit that dynamically changes the value of a peak inductor current responsive to one or more determinations that are related to one of the boosted output voltage and a switching frequency of the DC/DC boost converter.