Invention Grant
- Patent Title: Temperature sensor
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Application No.: US16508497Application Date: 2019-07-11
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Publication No.: US11209320B2Publication Date: 2021-12-28
- Inventor: Yasunori Hioki , Tsuyoshi Sekitani , Takafumi Uemura , Tomoaki Onoue
- Applicant: Murata Manufacturing Co., Ltd. , OSAKA UNIVERSITY
- Applicant Address: JP Nagaokakyo; JP Suita
- Assignee: Murata Manufacturing Co., Ltd.,OSAKA UNIVERSITY
- Current Assignee: Murata Manufacturing Co., Ltd.,OSAKA UNIVERSITY
- Current Assignee Address: JP Nagaokakyo; JP Suita
- Agency: Arent Fox LLP
- Priority: JPJP2017-014178 20170130
- Main IPC: G01K7/22
- IPC: G01K7/22 ; H01C7/04 ; G01K1/024 ; G01K1/02 ; H01C17/065

Abstract:
A temperature sensor that includes an organic-inorganic composite negative temperature coefficient thermistor and a transistor. The organic-inorganic composite negative temperature coefficient thermistor includes a thermistor layer which includes spinel-type semiconductor ceramic composition powder containing Mn, Ni and Fe and an organic polymer component, and a pair of electrode layers. The semiconductor ceramic composition powder has a molar ratio of Mn to Ni of 85/15≥Mn/Ni≥65/35 and a Fe content of 30 parts by mole or less when a total molar amount of Mn and Ni is regarded as 100 parts by mole, and has a peak with a local maximum value of around 29° to 31° in its X-ray diffraction pattern, a half width of which peak is 0.15 or more. The transistor is electrically connected with either one of the pair of electrode layers.
Public/Granted literature
- US20190331536A1 TEMPERATURE SENSOR Public/Granted day:2019-10-31
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