- 专利标题: Over charge protection method and voltage converter using the over charge protection method
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申请号: US17087643申请日: 2020-11-03
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公开(公告)号: US11211903B1公开(公告)日: 2021-12-28
- 发明人: Ya-Mien Hsu , Deng-Yao Shih , Yang-Jing Huang
- 申请人: Elite Semiconductor Microelectronics Technology Inc.
- 申请人地址: TW Hsinchu
- 专利权人: Elite Semiconductor Microelectronics Technology Inc.
- 当前专利权人: Elite Semiconductor Microelectronics Technology Inc.
- 当前专利权人地址: TW Hsinchu
- 代理商 Winston Hsu
- 主分类号: H03F3/217
- IPC分类号: H03F3/217 ; H03F1/52 ; H03F3/38
摘要:
An over charge protection method applied to a voltage converter which can operate in a quaternary modulation mode (Q mode) or a ternary modulation mode (T mode). The over charge protection method comprises: (a) determining whether the voltage converter operates in the Q mode or the T mode; and (b) setting a current threshold of the voltage converter to a first over current threshold if the voltage converter operates in the T mode; and (c) setting the current threshold to a second over current threshold if the voltage converter operates in the Q mode, wherein the first current threshold is smaller than the second over current threshold.
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