- 专利标题： Memory device capable of improving a threshold voltage distribution of memory cells and method of operating the memory device
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申请号： US16784160申请日： 2020-02-06
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公开(公告)号： US11217317B2公开(公告)日： 2022-01-04
- 发明人: Jong Kyung Park , Ji Hyun Seo
- 申请人： SK hynix Inc.
- 申请人地址： KR Icheon-si
- 专利权人： SK hynix Inc.
- 当前专利权人： SK hynix Inc.
- 当前专利权人地址： KR Icheon-si
- 代理机构： William Park & Associates Ltd.
- 优先权： KR10-2019-0091216 20190726
- 主分类号： G11C16/34
- IPC分类号： G11C16/34 ; G11C16/12 ; G06F12/0882 ; G11C16/24 ; G06F12/02 ; G11C16/08
摘要：
A memory device according to an embodiment includes a memory cell block including a plurality of pages with each page corresponding to a word line of a plurality of word lines, a peripheral circuit configured to perform a program operation on the plurality of pages, and control logic configured to control the peripheral circuit to perform the program operation. The control logic changes and sets a bit line voltage applied to bit lines of the memory cell block during a program verify operation of the program operation according to a program order of each of the plurality of pages.
公开/授权文献
- US20210027849A1 MEMORY DEVICE AND METHOD OF OPERATING THE MEMORY DEVICE 公开/授权日：2021-01-28
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