Invention Grant
- Patent Title: Semiconductor device with source resistor and manufacturing method thereof
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Application No.: US16796668Application Date: 2020-02-20
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Publication No.: US11217526B2Publication Date: 2022-01-04
- Inventor: Po-Zeng Kang , Wen-Shen Chou , Yung-Chow Peng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/522 ; H01L27/06 ; H01L21/768 ; H01L49/02 ; H01L23/535
Abstract:
A semiconductor device includes transistors and a resistor. The transistors are connected in series between a power terminal and a ground terminal, and gate terminals of the transistors being connected together. The resistor is overlaid above the transistors. The resistor is connected between a source terminal of the transistors and the ground terminal.
Public/Granted literature
- US20200279809A1 SEMICONDUCTOR DEVICE WITH SOURCE RESISTOR AND MANUFACTURING METHOD THEREOF Public/Granted day:2020-09-03
Information query
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