- 专利标题： Method of manufacturing active matrix substrate
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申请号： US16833286申请日： 2020-03-27
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公开(公告)号： US11217610B2公开(公告)日： 2022-01-04
- 发明人: Atsushi Hachiya , Hiroaki Furukawa , Kazuya Tsujino
- 申请人： SHARP KABUSHIKI KAISHA
- 申请人地址： JP Sakai
- 专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人地址： JP Sakai
- 代理机构： ScienBiziP, P.C.
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L29/786 ; G02B26/00
摘要：
An active matrix substrate includes: a first substrate; and first electrodes, a dielectric layer covering the first electrodes, and a first water-repelling layer in this sequence on the first substrate, wherein the dielectric layer has a multilayer structure including two or more layers and includes a silicon nitride film and a metal-oxide film between the silicon nitride film and the first water-repelling layer, and the silicon nitride film has an oxygen-containing surface layer region on a surface thereof that is in contact with the metal-oxide film.
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