Invention Grant
- Patent Title: Semiconductor device package
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Application No.: US16593884Application Date: 2019-10-04
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Publication No.: US11222845B2Publication Date: 2022-01-11
- Inventor: Po-I Wu , Chen-Chao Wang
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/528
Abstract:
A semiconductor device includes a dielectric layer, a first conductive layer penetrating the dielectric layer, and a grounding structure disposed within the dielectric layer and adjacent to the first conductive layer. The dielectric layer has a first surface and a second surface opposite the first surface. The first conductive layer has a first portion and a second portion connected to the first portion. The first portion has a width greater than that of the second portion.
Public/Granted literature
- US20210104461A1 SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2021-04-08
Information query
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