发明授权
- 专利标题： Plasma chamber target for reducing defects in workpiece during dielectric sputtering
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申请号： US16918513申请日： 2020-07-01
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公开(公告)号： US11227751B1公开(公告)日： 2022-01-18
- 发明人: Xiaodong Wang , Jianxin Lei , Rongjun Wang
- 申请人： APPLIED MATERIALS, INC.
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Moser Taboada
- 主分类号： H01J37/34
- IPC分类号： H01J37/34 ; C23C14/34
摘要：
Methods and apparatus for plasma chamber target for reducing defects in workpiece during dielectric sputtering are provided. For example, a dielectric sputter deposition target can comprise a dielectric compound having a predefined average grain size ranging from approximately 65 μm to 500 μm, wherein the dielectric compound is at least one of magnesium oxide or aluminum oxide.
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