A method for forming an interconnect structure is provided. The method for forming the interconnect structure includes forming a first dielectric layer over a substrate, forming a first conductive feature through the first dielectric layer, forming a first blocking layer on the first conductive feature, forming a first etching stop layer over the first dielectric layer and exposing the first blocking layer, removing at least a portion of the first blocking layer, forming a first metal bulk layer over the first etching stop layer and the first conductive feature, and etching the first metal bulk layer to form a second conductive feature electrically connected to the first conductive feature.