- 专利标题: Amplifier having switch and switch control processor controlling switch
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申请号: US16750826申请日: 2020-01-23
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公开(公告)号: US11227930B2公开(公告)日: 2022-01-18
- 发明人: Sangmin Lee , Youngchang Yoon , Daehoon Kwon , Jaehyup Kim
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Jefferson IP Law, LLP
- 优先权: KR10-2019-0009121 20190124
- 主分类号: H03G3/30
- IPC分类号: H03G3/30 ; H01L29/43 ; H01L29/10 ; H03F3/45 ; H03G1/00 ; H03F3/195 ; H03K17/687
摘要:
The present disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system such as Long Term Evolution (LTE).
An amplifier is provided. The amplifier includes a first resistor electrically connected to the input terminal, a second resistor electrically connected to the output terminal, a switch including a metal-oxide-semiconductor field-effect transistor (MOSFET) and electrically connected to one end of the second resistor, and a switch control processor configured to electrically connect the gate terminal of the MOSFET constituting the switch and the bulk terminal of the MOSFET constituting the switch to an impedance having an impedance value higher than a preset first threshold.
An amplifier is provided. The amplifier includes a first resistor electrically connected to the input terminal, a second resistor electrically connected to the output terminal, a switch including a metal-oxide-semiconductor field-effect transistor (MOSFET) and electrically connected to one end of the second resistor, and a switch control processor configured to electrically connect the gate terminal of the MOSFET constituting the switch and the bulk terminal of the MOSFET constituting the switch to an impedance having an impedance value higher than a preset first threshold.
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