- 专利标题: Si2Te3 resistive memory
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申请号: US16657851申请日: 2019-10-18
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公开(公告)号: US11227995B2公开(公告)日: 2022-01-18
- 发明人: Jingbiao Cui , Keyue Wu , Jiyang Chen , Xiao Shen
- 申请人: Jingbiao Cui , Keyue Wu , Jiyang Chen , Xiao Shen
- 申请人地址: US TN Collierville; CN Lu'an; US TN Cordova; US TN Bartlett
- 专利权人: Jingbiao Cui,Keyue Wu,Jiyang Chen,Xiao Shen
- 当前专利权人: Jingbiao Cui,Keyue Wu,Jiyang Chen,Xiao Shen
- 当前专利权人地址: US TN Collierville; CN Lu'an; US TN Cordova; US TN Bartlett
- 代理机构: Baker Donelson
- 代理商 Wayne Edward Ramage
- 主分类号: H01L45/00
- IPC分类号: H01L45/00
摘要:
A ReRAM device manufactured using 2-D Si2Te3 (silicon telluride) nanowires or nanoplates. The Si2Te3 nanowires exhibit a unique reversible resistance switching behavior driven by an applied electrical potential, which leads to switching of the NWs from a high-resistance state (HRS) to a low-resistance state (LRS). This switched LRS is highly stable unless the opposite potential is applied to switch the resistance back. This provides a new class of resistive switching based on semiconductor rather than dielectric materials. In several embodiments, the polarity of the initially applied potential along the Si2Te3 nanowires defines the switch “on” and “off” directions, which become permanent once set.