Integrated circuits with enhanced EOS/ESD robustness and methods of designing same. One such integrated circuit includes a plurality of input/output pads, a positive voltage rail, a ground voltage rail, a collection of internal circuits representing the operational core of the integrated circuit, a plurality of input/output buffering circuits connected as inputs and outputs to the internal circuits, wherein the internal circuits and the input/output buffering circuits comprise functional devices, and a plurality of EOS/ESD protection circuits interconnected with the input/output pads to limit ESD voltage and/or shunt ESD current away from the functional devices. At least one of the EOS/ESD protection circuits is a MOSFET. The MOSFET has a source region having an accompanying ohmic contact. The MOSFET further has a rectifying junction contact in place of a drain region and accompanying ohmic contact.