- 专利标题： Active pattern structure and semiconductor device including the same
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申请号： US16887900申请日： 2020-05-29
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公开(公告)号： US11233151B2公开(公告)日： 2022-01-25
- 发明人: Sangmoon Lee , Kyungin Choi , Seunghun Lee
- 申请人： SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 代理机构： Myers Bigel, P.A.
- 优先权： KR10-2019-0142901 20191108
- 主分类号： H01L31/113
- IPC分类号： H01L31/113 ; H01L31/119 ; H01L29/78 ; H01L29/06 ; H01L29/66 ; H01L29/417
摘要：
An active pattern structure includes a lower active pattern protruding from an upper surface of a substrate in a vertical direction substantially perpendicular to an upper surface of the substrate, a buffer structure on the lower active pattern, at least a portion of which may include aluminum silicon oxide, and an upper active pattern on the buffer structure.
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