- 专利标题: Methods and systems for improving power delivery and signaling in stacked semiconductor devices
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申请号: US16391804申请日: 2019-04-23
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公开(公告)号: US11239200B2公开(公告)日: 2022-02-01
- 发明人: Anthony D. Veches
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Perkins Coie LLP
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L25/065 ; H01L23/64 ; H01L25/00 ; H01L23/00
摘要:
Semiconductor die assemblies including stacked semiconductor dies having parallel plate capacitors formed between adjacent pairs of semiconductor dies in the stack, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor die assembly includes a first semiconductor die and a second semiconductor die stacked over the first semiconductor die. The first semiconductor die includes an upper surface having a first capacitor plate formed thereon, and the second semiconductor die includes a lower surface facing the upper surface of the first semiconductor die and having a second capacitor plate formed thereon. A dielectric material is formed at least partially between the first and second capacitor plates. The first capacitor plate, second capacitor plate, and dielectric material together form a capacitor that stores charge locally within the stack, and that can be accessed by the first and/or second semiconductor dies.
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