- 专利标题： Transistor and logic gate
-
申请号： US16828939申请日： 2020-03-24
-
公开(公告)号： US11239235B2公开(公告)日： 2022-02-01
- 发明人: Chen-Chih Wang , Li-Wei Ho
- 申请人： Chen-Chih Wang
- 申请人地址： TW New Taipei
- 专利权人： Chen-Chih Wang
- 当前专利权人： Chen-Chih Wang
- 当前专利权人地址： TW New Taipei
- 代理机构： CKC & Partners Co., LLC
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L27/11556 ; H01L27/06 ; H01L21/8238 ; H01L27/092 ; H01L27/118 ; H01L29/423 ; H01L29/06
摘要：
A transistor includes a substrate having a plurality of source/drain regions and a channel region between the source/drain regions, a gate, and a gate dielectric layer between the gate and the substrate. The substrate tapers in a direction away from the gate dielectric layer in top view. The gate is embedded in the gate dielectric layer. The transistor structure density can be improved.
公开/授权文献
- US20200227411A1 TRANSISTOR AND LOGIC GATE 公开/授权日：2020-07-16
信息查询
IPC分类:
