Invention Grant
- Patent Title: Chemically sensitive field effect transistors and uses thereof in electronic nose devices
-
Application No.: US16000121Application Date: 2018-06-05
-
Publication No.: US11243186B2Publication Date: 2022-02-08
- Inventor: Hossam Haick
- Applicant: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD.
- Applicant Address: IL Haifa
- Assignee: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD.
- Current Assignee: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD.
- Current Assignee Address: IL Haifa
- Agency: Browdy and Neimark, PLLC
- Main IPC: G01N27/414
- IPC: G01N27/414 ; H01L29/772 ; B82Y15/00 ; B82Y30/00 ; G01N33/543 ; H01L29/08 ; G01N33/00 ; G01N33/497

Abstract:
A system having an electronic device. The electronic device has an array of chemically sensitive sensors. The sensors detect volatile organic compounds and have field effect transistors. The transistors have non-oxidized, functionalized silicon nanowires. The nanowires have surface Si atoms. The device has a plurality of functional groups that form a direct Si—C bond with the silicon nanowires, wherein Si is a surface Si atom and C is a carbon atom of the functional group. The functional groups are selected from the group consisting of: alkyl, cycloalkyl, alkenyl, alkynyl, aryl, heterocyclyl, heteroaryl, alkylaryl, alkylalkenyl, alkylalkynyl, alkylcycloalkyl, alkylheterocyclyl and alkylheteroaryl groups, and derivatives thereof, wherein said functional groups are other than methyl and 1-butyl. The plurality of functional groups are attached to 50-100% of the surface Si atoms.
Public/Granted literature
- US20180282155A1 CHEMICALLY SENSITIVE FIELD EFFECT TRANSISTORS AND USES THEREOF IN ELECTRONIC NOSE DEVICES Public/Granted day:2018-10-04
Information query