- 专利标题： Semiconductor device and manufacturing method for semiconductor device
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申请号： US16558482申请日： 2019-09-03
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公开(公告)号： US11244875B2公开(公告)日： 2022-02-08
- 发明人: Yasutaka Shimizu
- 申请人： Mitsubishi Electric Corporation
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Studebaker & Brackett PC
- 优先权： JPJP2018-228965 20181206
- 主分类号： H01L23/053
- IPC分类号： H01L23/053 ; H01L23/00 ; H01L21/48 ; H01L23/08 ; H01L25/065
摘要：
A semiconductor device includes a case enclosing a region where a semiconductor element as a component of an electric circuit exists. A resin part is fixed to an inside of the case in contact with the region. The resin part is provided with a conductive film, which is a part of the electric circuit. The conductive film is provided in the resin part so that the conductive film comes into contact with the region.
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